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PhD position - Development of low-temperature processes for the synthesis of lamellar (2D) sulfides
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JOB DETAILS
Published: 20 days ago
Application deadline: Oct 31
Location: Grenoble, France
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PhD position - Development of low-temperature processes for the synthesis of lamellar (2D) sulfides

SL-DRT-18-0993

RESEARCH FIELD

Solid state physics, surfaces and interfaces

ABSTRACT

Among the most promising materials for “More than Moore” technologies (chemical sensors, photodetectors, nano-batteries,…), 2D transition metal dichalcogenides have recently been identified as high-potential candidates. In particular, semiconducting transition metal disulfides such as MoS2 and WS2 have been thoroughly studied because of their chemical robustness, but their synthesis actually requires ultrahigh-temperature processes (> 800°C) which severely hinder their integration capabilities.In this context, tin disulfide (SnS2) appears as a good alternative to MoS2 or WS2 since it can be obtained with good crystallinity at much lower temperatures (< 350°C), making it potentially compatible with an ”above IC” integration. Moreover, tin is a relatively non-toxic and earth-abundant metal with almost all of its oxide and sulfide derivatives (SnS, Sn2S3, SnS2, SnO et SnO2) being semiconductors, which opens up a wide range of perspectives in term of potential applications.This PhD work will aim at developing industrially-relevant processes for the synthesis of SnS2 (or other semiconducting 2D materials that can be obtained at low temperature), either by sulfurization of the corresponding oxide or using a deposition process such as ALD (Atomic Layer Deposition), in order to create novel devices based on these materials, and ideally compatible with already-existing technologies on 200 or 300 mm wafers. This study will also cover the characterization of the obtained materials through different methods (XPS, X-ray fluorescence, Raman, XRD, TEM, KPEEM,..) as well as the assembly of basic devices allowing to establish a correlation between physicochemical properties and electrical characteristics of the target material.

LOCATION

Département Technologies Silicium (LETI)

Laboratoire

Grenoble

CONTACT PERSON

CADOT Stéphane

CEA

DRT/DTSI/SDEP/LDJ

Commissariat à l’énergie atomique et aux énergies alternatives17 Rue des Martyrs, 38054 Grenoble Cedex 9, France

Phone number: +334 38 78 02 95

Email: stephane.cadot@cea.fr

UNIVERSITY / GRADUATE SCHOOL

Université Grenoble Alpes

Electronique, Electrotechnique, Automatique, Traitement du Signal (EEATS)

START DATE

Start date on 01-09-2018

THESIS SUPERVISOR

RENEVIER Hubert

Grenoble INP

LMGP/NanoMat

Grenoble INP - Minatec3 parvis Louis Néel - CS 50257 - 38016 Grenoble cedex 1

Phone number: +334 56 52 92 48

Email: hubert.renevier@grenoble-inp.fr

« The age limit is 26 years for PhD offers and 30 years old for post-doc offers. »

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